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NTR3162P
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain--to--Source Breakdown Voltage
Drain--to--Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate--to--Source Leakage Current
V (BR)DSS
V (BR)DSS
/T J
I DSS
I GSS
V GS = 0 V, I D = --250 m A
I D = --250 m A, Reference to 25 ° C
V GS = 0 V, V DS = --16 V, T J = 25 ° C
V GS = 0 V, V DS = --16 V, T J = 85 ° C
V DS = 0 V, V GS = ? 8 V
--20
14.5
--1.0
--5.0
± 100
V
mV/ ° C
m A
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = --250 m A
--0.3
--0.6
--1.0
V
Negative Threshold Temperature
Coefficient
V GS(TH)
/T J
2.5
mV/ ° C
Drain--to--Source On--Resistance
R DS(on)
V GS = --4.5 V, I D = --2.2 A
48
70
m Ω
V GS = --2.5 V, I D = --1.9 A
V GS = --1.8 V, I D = --1.7 A
V GS = --1.5 V, I D = --1.0 A
57
72
88
95
120
Forward Transconductance
g FS
V DS = --5.0 V, I D = --2.2 A
9.0
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
940
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V GS = 0 V, f = 1.0 MHz,
V DS = --10 V
140
100
Total Gate Charge
Q G(TOT)
10.3
nC
Threshold Gate Charge
Gate--to--Source Charge
Gate--to--Drain Charge
Q G(TH)
Q GS
Q GD
V GS = --4.5 V, V DS = --10 V,
I D = --3.6 A
0.5
1.4
2.7
Gate Resistance
R G
6.0
Ω
SWITCHING CHARACTERISTICS (Note 4)
Turn--On Delay Time
t d(on)
8.0
ns
Rise Time
Turn--Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = --4.5 V, V DD = --10 V,
I D = --3.6 A, R G = 6 Ω
15
31
50
DRAIN--SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V SD
t RR
t a
t b
Q RR
V GS = 0 V, I S = --1.0 A, T J = 25 ° C
V GS = 0 V, I D = --1.0 A,
dI SD /d t = 100 A/ m s
0.7
25
8.0
17
11
1.2
V
ns
nC
2. Surface--mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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